Selected Publications

  1. Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films, D. Ruzmetov, S. D. Senanayake, V. Narayanamurti and S. Ramanathan, Physical Review B, 77, 195442 (2008)
  2. Superior nanoscale passive oxide layers synthesized under photon irradiation for environmental protection, C. L. Chang, M. Engelhard and S. Ramanathan, Applied Physics Letters, 92, 263103 (2008)
  3. Enhanced grain growth under photon irradiation in yttria-doped zirconia thin film structures, M. Tsuchiya and S. Ramanathan, Philosophical Magazine Letters, in press, 2008
  4. Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conductivtiy studies, S. Ramanathan, A. Karthikeyan, S. A. Govindarajan and P. Kirsch, Journal of Vacuum Science and Technology B, in press, 2008
  5. An investigation into photon irradiation induced structural and interfacial phenomena in pure and alio-valently doped zirconia thin films, M. Tsuchiya and S. Ramanathan, Philosophical Magazine, in press, 2008
  6. Effect of photon irradiation on the structural, insulating and dielectric properties of (Ba,Sr)TiO3 films, A. Podpirka, M. W. Cole and S. Ramanathan, Applied Physics Letters, 92, 212906 (2008)
  7. Oxygen surface exchange studies in Gd-doped ceria thin films, A. Karthikeyan and S. Ramanathan, Applied Physics Letters, 92, 243109 (2008)
  8. Effect of ultra-violet irradiation on the electrical resistance and phase transition characteristics of thin film vanadium oxide, C. Ko and S. Ramanathan, Journal of Applied Physics, 103, 106104 (2008)
  9. Synthesis and interfacial phenomena in ultra-thin ytrria-doped zirconia films grown by alloy oxidation under photon irradiation, M. Tsuchiya and S. Ramanathan, Applied Physics Letters, 92, 033107 (2008)
  10. Synthesis and phase stability in ultra-thin solid electrolytes: The case of zirconia thin Films, M. Tsuchiya, A. M. Minor and S. Ramanathan, Electrochemical Society Transactions, in press (2008)
  11. X-ray absorption spectroscopy studies of vanadium oxide thin films across the phase transition boundary, D. Ruzmetov, S. Senanayake and S. Ramanathan, Physical Review B, 75, 195102 (2007)
  12. Effect of photon irradiation on structure of yttria-doped zirconia thin films grown on semiconductor substrates, M. Tsuchiya and S. Ramanathan, Applied Physics Letters, 91, 253104 (2007)
  13. Higher permittivity rare-earth doped HfO2 and ZrO2 for logic and memory applications, S. Govindarajan, T. S. Boscke, P. Kirsch, M. A. Quevedo-Lopez, P. Sivasubramani, S. C. Song, R.M. Wallace, B. Gnade, P. Y. Hung, J. Price, U. Schroder, S. Ramanathan, B. H. Lee, R. Jammy, Proceedings of Technical Papers, International Symposium on VLSI Technology, Systems and Applications, 44-45 (2007)
  14. Molecular beam synthesis and high temperature electrical characterization of crystalline ceria thin films, M. Tsuchiya, N. Bojarczuk and S. Ramanathan, Applied Physics Letters, 91, 223101 (2007)
  15. Structure-functional property relationships in RF-sputtered vanadium oxide thin films, D. Ruzmetov, K. Zawilski, V. Narayanamurti and S. Ramanathan, Journal of Applied Physics, 102, 113715 (2007)
  16. Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on carrier transport in a semiconductor channel, H.T. Wang and S. Ramanathan, Applied Physics Letters, 91, 012106 (2007); also selected for publication in Virtual Journal of Nanoscale Science and Technology, July 16, 2007 issue
  17. Observation of uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide, R. Mani and S. Ramanathan, Applied Physics Letters, 91, 062104 (2007)
  18. Atomic layer deposition of Y2O3/ZrO2 nanolaminates: a route to ultra-thin solid-state electrolyte membranes, C.N. Ginestra, R. Sreenivasan, A. Karthikeyan, S. Ramanathan and P.C. McIntyre, Electrochemical and Solid State Letters, 10, B161 (2007), also selected for publication in Virtual Journal of Nanoscale Science and Technology, August 6, 2007 issue
  19. Size-dependent phase transformations in nanoscale pure and Y-doped zirconia thin films, M. Tsuchiya, A. M. Minor and S. Ramanathan, Philosophical Magazine, 87, 5673 (2007)
  20. On the stability and oxidation of single crystal (100) InAs Surfaces, C.L. Chang, V. Shutthandan, S.C. Singhal and S. Ramanathan, Electrochemical Society Transactions, Physics and Technology of High-k Gate Dielectrics V, 11 (4), 409 (2007)
  21. Studies on structure-electrochemical conduction relationships in doped-zirconia thin films, A. Karthikeyan, M. Tsuchiya and S. Ramanathan, Solid State Ionics, accepted, 2007 (SSI-16 special issue)
  22. In-situ studies on stoichiometry and structure of thin film yttria-stabilized zirconia under thermal processing, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, Mater. Res. Soc. Symp. Proc. 1023-JJ01-07 (2007)
  23. A theoretical approach to investigate nanoscale oxidation of metal surfaces under ultra-violet irradiation , C.L. Chang and S. Ramanathan, Journal of the Electrochemical Society, 154, G160 (2007)
  24. Tunable conductivity in nanoscale Gd-doped ceria thin films, A. Karthikeyan, M. Tsuchiya, C.L. Chang and S. Ramanathan, Applied Physics Letters, 90, 263108 (2007)
  25. Higher permittivity rare earth doped hafnium oxide for sub-45nm Metal-Insulator-Semiconductor devices, S. Govindarajan, T. S. Böscke, P. Sivasubramani, U. Schröder, S. Ramanathan, P.D. Kirsch, B. E. Gnade, B.H. Lee, H.-H. Tseng, R. Jammy, Applied Physics Letters, 91, 062906 ( 2007)
  26. Non-invasive high-resolution acoustic microscopy technique using embedded nanostructures, D. Wulin and S. Ramanathan, Mater. Res. Soc. Symp. Proc.1019-FF06-02 (2007)
  27. In-situ ion scattering and X-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, Applied Physics Letters, 90, 203109 (2007)
  28. Effect of photon irradiation on conductivity of nanoscale yttria-doped zirconia thin films, A. Karthikeyan and S. Ramanathan, Applied Physics Letters, 90, 093107 (2007)
  29. High temperature conductivity studies of nanoscale yttria-doped zirconia films and size effects, A. Karthikeyan, C.L. Chang and S. Ramanathan, Applied Physics Letters, 89, 183116 (2006)
  30. In-situ characterization of doped-zirconia / Ge interfaces, C.L. Chang, V. Shutthanandan and S. Ramanathan, Proceedings of Materials Science and Technology Conference, 2006
  31. Theoretical investigation of on-chip sub-ambient microprocessor cooling, A. Jain and S. Ramanathan, Proceedings of ITHERM, 765-770 (2006)
  32. High-frequency acoustic microscopy studies on buried interfaces in silicon, S. Ramanathan, J. E. Semmens and L. W. Kessler, Proceedings of ECTC, 1865-1868 (2006)
  33. Theoretical analysis of thermal conductivitiy in amorphous inter-layer dielectrics, M. Samsa, P. Morrow and S. Ramanathan, Mater. Res. Soc. Symp. Proc., 914, F03-01 (2006)
  34. High-resolution non-invasive picosecond ultrasonic microscopy of buried interfaces, S. Ramanathan and D. G. Cahill, Journal of Materials Research: Rapid Communications, 21, 1204 (2006)
  35. Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65 nm strained Si/low-k CMOS tchnology, P. Morrow, C. M. Park, S. Ramanathan, M. Kobrinsky and M. Harmes, IEEE Electron Device Letters, 27, 335 (2006)
  36. Non-destructive high-resolution characterization of buried interfaces for advanced interconnect and packaging architectures: experiments and modeling; S. Ramanathan, C. Hu, E. Pickett, P. Morrow, Y. Liu and R. Dias, Microelectronic Engineering, 82, 84 (2005)
  37. Advanced fault isolation and failure analysis techniques for future package technologies, M. Pacheco, Z. Wang, L. Skoglund, Y. Liu, A. Medina, A. Raman, R. Dias, D. Goyal and S. Ramanathan, Intel Technology Journal, 9, 337 (2005)
  38. Solid-state refrigeration for cooling microprocessors, S. Ramanathan and G. Chrysler, IEEE Transactions on Components, Packaging and Manufacturing Technologies, 29, 179 (2006)
  39. Wafer-level three-dimensional (3-D) interconnects via copper bonding, P. Morrow, M. Kobrinsky, S. Ramanathan, C. M. Park, M. Harmes, V. Ramachandrarao, S. Kim and S. List, Proc. Advanced Metallization Conference, 2005
  40. Charge-trapping studies in ZrO2 and HfO2 gate dielectrics grown by ultra-violet ozone oxidation, S. Ramanathan, P.C. McIntyre, S. Guha and E.P. Gusev, Applied Physics Letters, 84, 389 (2004)
  41. Ultra-violet ozone oxidation of metal films, S. Ramanathan, D. Chi, P.C. McIntyre, C.J. Wetteland and J.R. Tesmer, Journal of Electrochemical Society, 150, F110 (2003).
  42. Phase separation in hafnium silicates for alternative gate dielectrics, S. Ramanathan, P. C. McIntyre, J. Luning, P.S. Lysaght, Y. Yang, Z. Chen and S. Stemmer, Journal of Electrochemical Society, 150, F173 (2003)
  43. Germanium MOS capacitors incorporating ultra-thin high-k dielectric, C.O. Chui, S. Ramanathan, B. Triplett, P.C. McIntyre and K.C. Saraswat, IEEE Electron Device Letters, 23, 473 (2002).
  44. Structural studies on zirconia dielectrics, S. Ramanathan, P.C. McIntyre, J. Luning, P. Pianetta and D.A. Muller, Philosophical Magazine Letters, 82, 519 (2002).
  45. Ultra-thin zirconia / SiO2 dielectric stacks grown by ultra-violet ozone oxidation, S. Ramanathan and P.C. McIntyre, Applied Physics Letters, 80, 3793 (2002).
  46. Electrical properties of ultrathin zirconia films grown by UV ozone oxidation, S. Ramanathan, C.M. Park and P.C. McIntyre, Journal of Applied Physics, 91, 4521-4527 (2002).
  47. Room temperature grown ultra-thin zirconia / SiO2 stacks with 1 nm EOT, S. Ramanathan, P.C. McIntyre, S. Guha and E.P. Gusev, IEEE Device Research Conference Digest, p.101 (2002).
  48. Ultra-thin high-k gate dielectric technology for Germanium MOS applications, C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Device Research Conference Digest, p. 191-192 (2002)
  49. Growth and characterization of ultra-thin zirconia dielectrics grown by UV-ozone oxidation, S. Ramanathan, G.D. Wilk, D.A. Muller, C.M. Park and P.C. McIntyre, Applied Physics Letters, 79, 2621-2623 (2001).
  50. Effect of oxygen stoichiometry on electrical properties of zirconia dielectrics, S. Ramanathan, D.A. Muller, G. Wilk, C.M. Park and P.C. McIntyre, Applied Physics Letters, 79, 3311-3313 (2001).
  51. Microstructural study of epitaxial Pt films and permalloy / Pt films on (0001) Sapphire, S. Ramanathan, B.M. Clemens, P.C. McIntyre and U. Dahmen, Philosophical Magazine A, 81, 2073-2094 (2001).
  52. Effects of deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films, S. Das, S. Ramanathan, P.R.S. Rao and K.N. Bhat, Journal of Materials Science, 35, 4743-4746 (2000).
  53. Epitaxial Pt on (0001) sapphire A microstructural study, S. Ramanathan, P.C. McIntyre and U. Dahmen, Proceedings of Electron Microscopy Society of America, 6, p. 437 (2000).
  54. On the growth of BSCCO whiskers, S. Ramanathan, Z. Li and K. Ravichandar, Physica C, 289, 192 (1997)

Other Publications

  • Towards low temperature solid oxide fuel cells, A.C. Johnson and S. Ramanathan, World Ecology Report, XIX, 2 (2007)
  • Fundamental studies on nanoscale zirconia dielectrics, S. Ramanathan, Ph.D. Dissertation, Stanford University, 2002
  • The growth of BiSrCaCuO (Bi-2212) superconducting single crystal whiskers, S. Ramanathan, M.S. Thesis, University of Houston, 1997
  • Microstructure-electrical property relationships in LPCVD polysilicon thin films, S. Ramanathan, B.Tech. Project Report, IIT Madras, 1996
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